august 2012 ?2012 fairchild semiconductor corporation FDMC89521L rev. c www.fairchildsemi.com 1 FDMC89521L dual n-channel powertrench ? mosfet FDMC89521L dual n-channel powertrench ? mosfet 60 v, 8.2 a, 17 m features ? max r ds(on) = 17 m at v gs = 10 v, i d = 8.2 a ? max r ds(on) = 27 m at v gs = 4.5 v, i d = 6.7 a ? termination is lead-free ? rohs compliant general description this device includes two 60 v n-channel mosfets in a dual power 33 (3 mm x 3 mm mlp) package. the package is enhanced for exceptional thermal performance. applications ? battery protection ? load switching ? bridge topologies d1 d2 s1 g1 s2 g2 power 33 pin 1 s1 s1 s2 s2 g1 s1 g2 s2 s1 s1 s2 s2 mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 60 v v gs gate to source voltage ) 20 v i d drain current -continuous t a = 25 c (note 1a) 8.2 a -pulsed 40 e as single pulse avalanche energy (note 3) 32 mj p d power dissipation t a = 25 c (note 1a) 1.9 w power dissipation t a = 25 c (note 1b) 0.8 t j , t stg operating and storage junction temperature range -55 to +150 c r ja thermal resistance, junction to ambient (note 1a) 65 c/w r ja thermal resistance, junction to ambient (note 1b) 155 device marking device package reel size tape width quantity FDMC89521L FDMC89521L power 33 13 ?? 12 mm 3000 units
www.fairchildsemi.com 2 ?2012 fairchild semiconductor corporation FDMC89521L rev. c FDMC89521L dual n-channel powertrench ? mosfet electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v60 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 30 mv/c i dss zero gate voltage drain current v ds = 48 v, v gs = 0 v1 a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a11.93v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -6 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 8.2 a 13 17 m v gs = 4.5 v, i d = 6.7 a2127 v gs = 10 v, i d = 8.2 a, t j = 125 c 20 26 g fs forward transconductance v ds = 10 v, i d = 8.2 a28s c iss input capacitance v ds = 30 v, v gs = 0 v, f = 1 mhz 1228 1635 pf c oss output capacitance 243 325 pf c rss reverse transfer capacitance 10 15 pf r g gate resistance 0.7 t d(on) turn-on delay time v dd = 30 v, i d = 8.2 a, v gs = 10 v, r gen = 6 7.9 16 ns t r rise time 2.1 10 ns t d(off) turn-off delay time 18 33 ns t f fall time 1.7 10 ns q g total gate charge v gs = 0 v to 10 v v dd = 30 v, i d = 8.2 a 17 24 nc q g total gate charge v gs = 0 v to 4.5 v 7.9 12 nc q gs gate to source charge 3.8 nc q gd gate to drain ?miller? charge 1.9 nc v sd source-drain diode forward voltage v gs = 0 v, i s = 8.2 a (note 2) 0.85 1.3 v v gs = 0 v, i s = 1.6 a (note 2) 0.75 1.2 t rr reverse recovery time i f = 8.2 a, di/dt = 100 a/ s 25 40 ns q rr reverse recovery charge 11 20 nc notes : 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. e as of 32 mj is based on starting t j = 25 c, l = 1 mh, i as = 8 a, v dd = 54 v, v gs = 10 v. 100% tested at l = 3 mh, i as = 5.4 a. a. 65 c/w when mounted on a 1 in 2 pa d of 2 o z cop pe r b. 155 c/w when mounted on a minimum pad of 2 oz copper g df ds sf ss g df ds sf ss
www.fairchildsemi.com 3 ?2012 fairchild semiconductor corporation FDMC89521L rev. c FDMC89521L dual n-channel powertrench ? mosfet typical characteristics t j = 25 c unless otherwise noted figure 1. 0.00.51.01.52.02.5 0 10 20 30 40 v gs = 5 v v gs = 6 v v gs = 4 v v gs = 4.5 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 3.5 v v gs = 10 v i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. 0 10203040 0 1 2 3 4 v gs = 6 v v gs = 4.5 v v gs = 3.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 4 v v gs = 5 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i d = 8.2 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 24681 0 0 10 20 30 40 50 60 t j = 125 o c i d = 8.2 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 12345 0 10 20 30 40 t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
www.fairchildsemi.com 4 ?2012 fairchild semiconductor corporation FDMC89521L rev. c FDMC89521L dual n-channel powertrench ? mosfet figure 7. 0 3 6 9 12 15 18 0 2 4 6 8 10 i d = 8.2 a v dd = 40 v v dd = 20 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 30 v gate charge characteristics figure 8. 0.1 1 10 60 1 10 100 1000 10000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 1 10 20 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 0.01 0.1 1 10 100 300 0.01 0.1 1 10 60 derived from test data 1 s 10 ms dc 10 s 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 155 o c/w t a = 25 o c f orw ard bi as safe operating area figure 11. single pulse maximum power dissipation 10 -3 10 -2 10 -1 11 0 100 1000 0.5 1 10 100 300 p (pk) , peak transient power (w) single pulse r t ja = 155 o c/w t a = 25 o c t, pulse width (sec) typical characteristics t j = 25 c unless otherwise noted
www.fairchildsemi.com 5 ?2012 fairchild semiconductor corporation FDMC89521L rev. c FDMC89521L dual n-channel powertrench ? mosfet figure 12. 10 -3 10 -2 10 -1 11 0 100 1000 0.001 0.01 0.1 1 single pulse r t ja = 155 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a junction-to-ambient transient thermal response curve typical characteristics t j = 25 c unless otherwise noted
www.fairchildsemi.com 6 ?2012 fairchild semiconductor corporation FDMC89521L rev. c FDMC89521L dual n-channel powertrench ? mosfet dimensional outline and pad layout
FDMC89521L dual n-channel powertrench ? mosfet ?2012 fairchild semiconductor corporation crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green bridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * p serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supp lementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many problem s such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by c ountry on our web page cited above. products custom ers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i61 ?
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